EMMC5.1 64GB 128GB 256GB Industrial-Grade EMMC 100,000 P/E Cycles 3 Million Hours MTBF High Reliability 512GB
Product Specification
Place of Origin:
Shenzhen, China
Brand Name:
PG
Model Number:
G2864TLCB/G28128TLCB/G28256TLCB/G2564LTCB/G25128LTCB/G25256LTCB
Minimum Order Quantity:
50pcs
Price:
Negotiable
Delivery Time:
10 to 15 days
Payment Terms:
L/C,T/T
Supply Ability:
100K a month
Product Summary
EMMC5.1 64GB 128GB 256GB Industrial-Grade EMMC 100,000 P/E Cycles 3 Million Hours MTBF High Reliability 512GB Industrial-grade eMMC 5.1 storage solutions offering exceptional reliability with 100,000 program/erase cycles and 3 million hours MTBF across multiple capacity options. CB EMMC5.1 ...
Product Details
Highlight:
EMMC5.1 64GB
,Embedded emmc 128gb
,emmc ic
Memory:
Flash
Custom:
Support
Origin:
China
Sequential Write Speed:
Up To 240 MB/s
Standard:
EMMC 5.1
Capacity:
64GB, 128GB, 256GB
Appearance:
11.5mmx13mmx1.0mm/11.5mmx13mmx1.2mm
Nand Flash Type:
3D NAND
Manufacturer:
PG Brand，China Chips Star
Storage Temperature:
-20-85℃
Product Description
EMMC5.1 64GB 128GB 256GB Industrial-Grade EMMC 100,000 P/E Cycles 3 Million Hours MTBF High Reliability 512GB
Industrial-grade eMMC 5.1 storage solutions offering exceptional reliability with 100,000 program/erase cycles and 3 million hours MTBF across multiple capacity options.
CB EMMC5.1 Specifications
| Model | G2864GTLCB | G28128TLCB | G28256TLCB |
|---|---|---|---|
| NAND Flash | 3DTLC NAND | 3DTLC NAND | 3DTLC NAND |
| Capacity | 64GB | 128GB | 256GB |
| CE | 1 | 2 | 4 |
| Read Speed | up to 330MB/s | up to 330MB/s | up to 330MB/s |
| Write Speed | up to 240MB/s | up to 240MB/s | up to 240MB/s |
| Operating Temperature | -25℃~85℃ | -25℃~85℃ | -25℃~85℃ |
| EP | ≥3000 | ≥3000 | ≥3000 |
| Packaging Specification | BGA 153 | BGA 153 | BGA 153 |
| Size | 11.5mm*13mm*1.0mm | 11.5mm*13mm*1.0mm | 11.5mm*13mm*1.2mm |
Storage Carrier: NAND Flash Memory Chip
NAND flash memory serves as the primary storage component in eMMC, directly determining storage capacity, read/write performance, and operational lifespan. Different NAND technologies offer varying levels of performance and endurance:
- SLC (Single-Level Cell): Stores 1 bit per cell with exceptional endurance (100,000+ P/E cycles), high-speed performance, and maximum stability. Ideal for industrial applications requiring superior reliability.
- MLC (Multi-Level Cell): Stores 2 bits per cell with 10,000-30,000 P/E cycles, balancing performance and cost. Previously used in mid-to-high-end mobile devices.
- TLC (Triple-Level Cell): Stores 3 bits per cell with 1,000-3,000 P/E cycles, offering cost-effective high-density storage for consumer electronics.
- QLC (Quad-Level Cell): Stores 4 bits per cell with several hundred P/E cycles, providing maximum capacity density for applications with minimal write requirements.
eMMC storage capacity is determined by the number and capacity of NAND flash memory chips, with options ranging from 4GB and 8GB to 64GB and 128GB to accommodate diverse device requirements.
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