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EMMC5.1 64GB 128GB 256GB Industrial-Grade EMMC 100,000 P/E Cycles 3 Million Hours MTBF High Reliability 512GB

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EMMC5.1 64GB 128GB 256GB Industrial-Grade EMMC 100,000 P/E Cycles 3 Million Hours MTBF High Reliability 512GB
Features Gallery Product Description Request A Quote
Features
Specifications
Memory: Flash
Custom: Support
Origin: China
Sequential Write Speed: Up To 240 MB/s
Standard: EMMC 5.1
Capacity: 64GB, 128GB, 256GB
Appearance: 11.5mmx13mmx1.0mm/11.5mmx13mmx1.2mm
Nand Flash Type: 3D NAND
Manufacturer: PG Brand，China Chips Star
Storage Temperature: -20-85℃
Highlight:

1TB PCIe3.0 SSD

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256GB PCIe3.0 SSD

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NAND Internal Solid State Drive
Basic Infomation
Place of Origin: China
Brand Name: PG
Model Number: G28128TLCB
Payment & Shipping Terms
Delivery Time: 10 to 15 days
Payment Terms: L/C,T/T
Supply Ability: 100K a month
Product Description
EMMC5.1 64GB 128GB 256GB Industrial-Grade EMMC 100,000 P/E Cycles 3 Million Hours MTBF High Reliability 512GB
Industrial-grade eMMC 5.1 storage solutions offering exceptional reliability with 100,000 program/erase cycles and 3 million hours MTBF across multiple capacity options.
CB EMMC5.1 Specifications
Model G2864GTLCB G28128TLCB G28256TLCB
NAND Flash 3DTLC NAND 3DTLC NAND 3DTLC NAND
Capacity 64GB 128GB 256GB
CE 1 2 4
Read Speed up to 330MB/s up to 330MB/s up to 330MB/s
Write Speed up to 240MB/s up to 240MB/s up to 240MB/s
Operating Temperature -25℃~85℃ -25℃~85℃ -25℃~85℃
EP ≥3000 ≥3000 ≥3000
Packaging Specification BGA 153 BGA 153 BGA 153
Size 11.5mm×13mm×1.0mm 11.5mm×13mm×1.0mm 11.5mm×13mm×1.2mm
Storage Carrier: NAND Flash Memory Chip
NAND flash memory serves as the primary storage component in eMMC, directly determining storage capacity, read/write performance, and operational lifespan. Different NAND technologies offer varying levels of performance and endurance:
  • SLC (Single-Level Cell): Stores 1 bit per cell with exceptional endurance (100,000+ P/E cycles), high-speed performance, and maximum stability. Ideal for industrial applications requiring superior reliability.
  • MLC (Multi-Level Cell): Stores 2 bits per cell with 10,000-30,000 P/E cycles, balancing performance and cost. Previously used in mid-to-high-end mobile devices.
  • TLC (Triple-Level Cell): Stores 3 bits per cell with 1,000-3,000 P/E cycles, offering cost-effective high-density storage for consumer electronics.
  • QLC (Quad-Level Cell): Stores 4 bits per cell with several hundred P/E cycles, providing maximum capacity density for applications with minimal write requirements.
eMMC storage capacity is determined by the number and capacity of NAND flash memory chips, with options ranging from 4GB and 8GB to 64GB and 128GB to accommodate diverse device requirements.
Tag:

Embedded eMMC5.1

eMMC BGA153

Memory Chip IC eMMC

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