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Quality High Endurance Program Erase Cycle eMMC 5.1 32GB 64GB 128GB BGA153 Flash Memory factory
Quality High Endurance Program Erase Cycle eMMC 5.1 32GB 64GB 128GB BGA153 Flash Memory factory
Quality High Endurance Program Erase Cycle eMMC 5.1 32GB 64GB 128GB BGA153 Flash Memory factory

High Endurance Program Erase Cycle eMMC 5.1 32GB 64GB 128GB BGA153 Flash Memory

Product Specification
Place of Origin: Shenzhen, China
Brand Name: PG
Certification: CE, RoHS, ISO9001,AEC-Q100,IATF16949
Model Number: G2832GTLCB/G2864GTLCB/G28128TLCB
Minimum Order Quantity: 50 Pieces
Price: Negotiable
standard packaging: Anti-static tray + vacuum sealed bag, export-grade carton
Delivery Time: 10 to 15 days
Payment Terms: T/T,L/C
Supply Ability: 100K a month

Product Summary

PG high endurance eMMC 5.1 32GB 64GB 128GB BGA153 flash memory engineered for long program erase cycles in write intensive embedded designs.

Product Details

Highlight:

High Endurance eMMC 5.1

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Long Program Erase Cycles

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Endurance Flash Storage

Storage Capacity: 32GB/64GB/128GB
NAND Flash Type: 3D TLC / PSLC Option
Interface: EMMC 5.1 HS400
Package: BGA153 11.5x13mm
Endurance: High Program Erase Cycle Rating
Error Correction: LDPC ECC
Wear Levelling: Static And Dynamic
Operating Temperature: -25C To +85C
Warranty: 3 Years
Custom: Support

Product Description

High Endurance Program Erase Cycle eMMC 5.1 32GB 64GB 128GB BGA153 Flash Memory

Write-heavy workloads are where embedded storage fails first. Data loggers, telematics boxes, surveillance recorders and edge gateways write continuously, and a low endurance part wears out long before the product warranty ends. This PG eMMC 5.1 is engineered around a high program erase cycle budget, so you can over-provision, log around the clock and still publish a predictable service life. It ships in 32GB, 64GB and 128GB densities with the familiar BGA153 footprint.

Endurance You Can Plan Around
  • High P/E cycle budget - more program erase cycles per cell so hot partitions survive years of continuous logging.
  • pSLC mode option - for the most write-intensive partitions, a pSLC configuration multiplies endurance at the cost of density.
  • Advanced wear levelling - static and dynamic algorithms spread writes evenly across every block to avoid early hot spots.
  • LDPC ECC - low density parity check error correction keeps bit error rates low as cells age.

Endurance is not only a NAND property. The controller firmware balances wear, manages bad blocks and reports health through standard eMMC commands, so host software can monitor and pre-emptively replace a device before it fails.

Product Models
Model Capacity NAND Package Dimensions
G2832GTLCB 32GB 3D TLC FBGA153 11.5*13mm
G2864GTLCB 64GB 3D TLC FBGA153 11.5*13mm
G28128TLCB 128GB 3D TLC FBGA153 11.5*13mm
Technical Specifications
Interface eMMC 5.1, HS400 mode
Capacity 32GB / 64GB / 128GB
NAND Flash 3D TLC NAND (pSLC option)
Endurance High program erase cycle rating
Error Correction LDPC ECC
Wear Levelling Static and dynamic
Operating Voltage VCC 3.3V, VCCQ 1.8V / 3.3V
Operating Temperature -25C to +85C
Package BGA153, 11.5 x 13 x 1.0mm
High Endurance Program Erase Cycle eMMC 5.1 32GB 64GB 128GB BGA153 Flash Memory
High Endurance Program Erase Cycle eMMC 5.1 32GB 64GB 128GB BGA153 Flash Memory
Key Advantages
  • High program erase cycle endurance for continuous write applications
  • pSLC option lifts endurance further on the hottest partitions
  • Static and dynamic wear levelling extend usable life
  • LDPC ECC protects data as cells age
  • Standard eMMC 5.1 HS400 interface and BGA153 footprint
  • Suited to data loggers, telematics, dashcams and edge gateways

PG has supplied flash memory from Shenzhen since day one, with CE, RoHS, ISO9001, AEC-Q100 and IATF16949 certified production. Endurance testing data and custom capacity or pSLC configurations are available for qualification projects.

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