logo
×
Quality High IOPS eMMC 5.1 64GB 128GB 256GB Random Read Write Optimized Embedded Flash factory
Quality High IOPS eMMC 5.1 64GB 128GB 256GB Random Read Write Optimized Embedded Flash factory
Quality High IOPS eMMC 5.1 64GB 128GB 256GB Random Read Write Optimized Embedded Flash factory

High IOPS eMMC 5.1 64GB 128GB 256GB Random Read Write Optimized Embedded Flash

Product Specification
Place of Origin: Shenzhen, China
Brand Name: PG
Certification: CE, RoHS, ISO9001,AEC-Q100,IATF16949
Model Number: G2864GTLCB/G28128TLCB/G28256TLCB
Minimum Order Quantity: 50 Pieces
Price: Negotiable
Standard Packaging: Anti-static tray + vacuum sealed bag, export-grade carton
Delivery Time: 10 to 15 days
Payment Terms: T/T,L/C
Supply Ability: 100K a month

Product Summary

PG high IOPS eMMC 5.1 64GB 128GB with random read write optimization for responsive embedded applications.

Product Details

Highlight:

High IOPS eMMC 5.1

,

Random Read Write Optimized

,

eMMC 5.1 package dimension

Product Description

High IOPS eMMC 5.1 64GB 128GB 256GB Random Read Write Optimized Embedded Flash
Product Overview

Not all storage workloads are sequential. Smartphones, tablets, kiosks and industrial HMIs constantly read and write many small files, and the user experience depends on random input output performance. This PG eMMC 5.1 is optimized for high IOPS operation, with controller tuning that accelerates small block reads and writes, reduces latency and keeps the system responsive even when many applications access storage at the same time.

The 64GB and 128GB devices combine 3D TLC NAND with an eMMC 5.1 HS400 controller featuring IOPS optimization, read sensing and multi-channel access. Random read and write operations are distributed across parallel NAND dies, which raises throughput for the fragmented access patterns typical of operating systems and databases.

In addition to raw IOPS, the controller includes wear leveling, TRIM and bad block management to sustain that random performance over the lifetime of the product. The result is a storage solution that feels fast on day one and stays fast after years of use in embedded systems.

Product Models
Model Capacity Protocol Standards NAND Package Dimensions Operating Temperature Storage Temperature
G2864GTLCB 64GB eMMC 5.1 3D TLC FBGA153 11.5*13mm -25℃~85℃ -40℃~105℃
G28128TLCB 128GB eMMC 5.1 3D TLC FBGA153 11.5*13mm -25℃~85℃ -40℃~105℃
G28256TLCB 256GB eMMC 5.1 3D TLC FBGA153 11.5*13mm -25℃~85℃ -40℃~105℃
G2819GPLCB 19GB eMMC 5.1 pSLC FBGA153 11.5*13mm -25℃~85℃ -40℃~105℃
G2508GTLCB 8GB eMMC 5.1 3D TLC FBGA153 11.5*13mm -0℃~70℃ -45℃~85℃
G2516GTLCB 16GB eMMC 5.1 3D TLC FBGA153 11.5*13mm -0℃~70℃ -45℃~85℃
G2532GTLCB 32GB eMMC 5.1 3D TLC FBGA153 11.5*13mm -0℃~70℃ -45℃~85℃
G2564GTLCB 64GB eMMC 5.1 3D TLC FBGA153 11.5*13mm -0℃~70℃ -45℃~85℃
G2504GPLCB 4GB eMMC 5.1 pSLC FBGA153 11.5*13mm -25℃~85℃ -40℃~85℃
G2508GPLCB 8GB eMMC 5.1 pSLC FBGA153 11.5*13mm -25℃~85℃ -40℃~85℃
G2516GPLCB 16GB eMMC 5.1 pSLC FBGA153 11.5*13mm -25℃~85℃ -40℃~85℃
Technical Specifications
Interface eMMC 5.1, HS400 mode
Capacity 64GB / 128GB / 256GB
NAND Flash 3D TLC NAND
Random Read Optimized, multi-channel
Random Write Optimized, IOPS tuned
Sequential Read Up to 300MB/s
Operating Temperature -25C to +85C
Package BGA153, 11.5 x 13 x 1.0mm

High IOPS eMMC 5.1 64GB 128GB 256GB Random Read Write Optimized Embedded Flash

High IOPS eMMC 5.1 64GB 128GB 256GB Random Read Write Optimized Embedded Flash

High IOPS eMMC 5.1 64GB 128GB 256GB Random Read Write Optimized Embedded Flash

Key Advantages
  • Controller level IOPS optimization for snappy small file access
  • Multi-channel NAND access raises random throughput for OS and app data
  • Reduced read write latency improves boot time and application launch
  • TRIM and wear leveling preserve performance over the product lifetime
  • Ideal for kiosks, tablets, POS, industrial HMI and edge devices
  • JEDEC eMMC 5.1 compliant for standard BGA153 board integration
Responsiveness Where It Matters

Users judge embedded devices by how quickly they react, and storage latency is a major part of that experience. This high IOPS eMMC 5.1 reduces the time needed to open applications, load maps, process transactions and switch between tasks. The controller's IOPS optimization and multi-channel NAND access directly target the small random read write patterns that dominate real operating system workloads.

High IOPS also protects the user experience as the device ages. TRIM and wear leveling keep the NAND clean and evenly worn, so random performance does not collapse after months of use. For interactive products such as kiosks, POS terminals and industrial HMIs, the responsiveness delivered by this eMMC 5.1 is a measurable competitive advantage.

Whether the workload is transaction processing, map rendering or machine control, this high IOPS eMMC 5.1 keeps the interface responsive and the user experience smooth from the first boot to end of life.

For interactive systems, the combination of high random IOPS and low latency in this eMMC 5.1 translates directly into a better user experience and faster transaction response.

Frequently Asked Questions
Q: Why does random IOPS matter in eMMC storage?
A: Operating systems and applications mostly access small files in random patterns. High random IOPS means faster app launches, quicker boot and smoother multitasking.
Q: How is high IOPS achieved in this eMMC?
A: The controller uses multi-channel NAND access, read sensing and IOPS optimization to improve small block throughput and reduce latency.
Q: Which densities are available?
A: This high IOPS eMMC 5.1 series is available in 64GB and 128GB densities.
You May Also Like